FQA7N90M TO-3P 7A 900V 210W 1.8Ω N-CHANNEL MOSFET
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FQA7N90M TO-3P 7A 900V 210W 1.8Ω N-CHANNEL MOSFET
FQA7N90M MOSFET
Type Designator: FQA7N90M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 210 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 40 nC
Rise Time (tr): 80 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm
Package: TO-3P
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