FQA70N10 TO-3P 70A 100V 214W 0.023Ω N-CHANNEL MOSFET
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FQA70N10 TO-3P 70A 100V 214W 0.023Ω N-CHANNEL MOSFET
FQA70N10 MOSFET
Type Designator: FQA70N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 214 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 85 nC
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: TO3PN
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