FQA17N40 TO-3P 17.2A 400V 190W 0.27Ω N-CHANNEL MOSFET
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FQA17N40 TO-3P 17.2A 400V 190W 0.27Ω N-CHANNEL MOSFET
FQA17N40 MOSFET
Type Designator: FQA17N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 17.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Rise Time (tr): 185 nS
Drain-Source Capacitance (Cd): 270 pF
Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm
Package: TO-3PN
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