FGA40N65SMD TO-3P 80A 650V 349W IGBT TRANSISTOR
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310,60 TL
FGA40N65SMD TO-3P 80A 650V 349W IGBT TRANSISTOR
FGA40N65SMD
Type Designator: FGA40N65SMD
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 349
Maximum Collector-Emitter Voltage |Vce|, V: 650
Collector-Emitter saturation Voltage |Vcesat|, V: 1.9
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 80
Maximum Junction Temperature (Tj), °C: 175
Rise Time, nS: 20
Maximum Collector Capacity (Cc), pF: 180
Package: TO3PN
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