FDS3672 SO-8 7.5A 100V 2.5W N-CHANNEL MOSFET TRANSISTOR
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1,99 USD + KDV
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82,41 TL
FDS3672
Type Designator: FDS3672
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 28 nC
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: SOIC
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