FDD3670 TO-252 34A 100V 83W 0.032OHM N-CHANNEL MOSFET
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FDD3670 TO-252 34A 100V 83W 0.032OHM N-CHANNEL MOSFET
FDD3670 MOSFET
Type Designator: FDD3670
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 34 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 57 nC
Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm
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