FDA38N30 TO-3P 38A 300V 312W 0.085Ω N-CHANNEL MOSFET
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FDA38N30 TO-3P 38A 300V 312W 0.085Ω N-CHANNEL MOSFET
FDA38N30 MOSFET
Type Designator: FDA38N30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 312 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 38 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
Package: TO3PN
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