FCH22N60N TO-247 22A 600V 205W 165MΩ N-CHANNEL MOSFET
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FCH22N60N TO-247 22A 600V 205W 165MΩ N-CHANNEL MOSFET
FCH22N60N MOSFET
Type Designator: FCH22N60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 205 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Maximum Drain-Source On-State Resistance (Rds): 0.165 Ohm
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