CS630A4H TO-252 9A 200V 83W 0.28OHM N-CHANNEL MOSFET
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CS630A4H TO-252 9A 200V 83W 0.28OHM N-CHANNEL MOSFET
CS630A4H MOSFET
Type Designator: CS630A4H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm
Package: TO-252
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