BUZ358 TO-218 4.5A 1000V N-CHANNEL SIPMOS POWER TRANSISTOR
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3,30 USD + KDV
*12,71 TL den başlayan taksitlerle!
136,67 TL
BUZ358 TO-218 4.5A 1000V N-CHANNEL SIPMOS POWER TRANSISTOR
BUZ358 MOSFET
Type Designator: BUZ358
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 2.6 Ohm
Package: TO-218AA
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