IXGM25N100A IGBT

Type Designator: IXGM25N100A

Type: IGBT

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 200

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 50

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 4(max)

Maximum G-E Threshold Voltag |VGE(th)|, V: 5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 200

Collector Capacity (Cc), typ, pF: 200

Total Gate Charge (Qg), typ, nC: 130

Package: TO204