AO4264E SOIC-8 13.5A 60V 3.1W 9.8Ω N-CHANNEL MOSFET
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AO4264E SOIC-8 13.5A 60V 3.1W 9.8Ω N-CHANNEL MOSFET
AO4264E MOSFET
Type Designator: AO4264E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.1 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
Maximum Drain Current |Id|: 13.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 18.5 nS
Drain-Source Capacitance (Cd): 300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0098 Ohm
Package: SO-8
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