2SK1119 TO-220AB 1000V 4A 100W N-CHANNEL MOSFET TRANSISTOR
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2SK1119 TO-220AB 1000V 4A 100W N-CHANNEL MOSFET TRANSISTOR
2SK1119
Type Designator: 2SK1119
Marking Code: K1119
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 3.8 Ohm
Package: TO220AB
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