2SD636-R SIP-3 0.1A 30V 0.4W NPN TRANSISTOR
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6,60 TL
2SD636-R SIP-3 0.1A 30V 0.4W NPN TRANSISTOR
2SD636
Type Designator: 2SD636
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: X73
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