2SB1216 TO-252 4A 100V 20W PNP TRANSISTOR
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18,64 TL
2SB1216 TO-252 4A 100V 20W PNP TRANSISTOR
2SB1216
Type Designator: 2SB1216
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 65 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
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