IRL620S MOSFET

Type Designator: IRL620S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 5.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16(max) nC

Rise Time (tr): 31 nS

Drain-Source Capacitance (Cd): 91 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO263