IRF3710 MOSFET

Type Designator: IRF3710

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 57 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 86.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO220AB