2SJ349

Type Designator: 2SJ349

Marking Code: J349

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 90 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 1300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: TO220NIS